A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3 μm lasers

被引：2
|
作者：
SpringThorpe, AJ
Extavour, M
Goodchild, D
Griswold, EM
Smith, G
White, JK
Hinzer, K
Glew, R
Williams, R
Robert, F
机构：
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[2] NortelNetworks Opt Components, Ottawa, ON K1Y 4H7, Canada
[3] Compound Semicond Solut, Richmond, ON K0A 2Z0, Canada
[4] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[5] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期
关键词：
morphological stability; molecular beam epitaxy; semiconducting aluminium compounds; laser diodes;
D O I：
10.1016/S0022-0248(02)02195-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Compressively strained MQW InAlGaAs laser structures have been grown on [100] sulfur-doped InP substrates using digital alloy molecular beam epitaxy at temperatures in the range 480-585degreesC. In the limited temperature interval similar to520-555degreesC quantum wells with similar to1.4% compressive strain become non-planar, and their photoluminescence emission spectra broaden significantly. AFM measurements show that this is due to the formation of quantum dashes. Their effect upon the material characteristics and subsequent device performance is presented and discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：760 / 765
页数：6
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