FIRST PRINCIPLES STUDY OF ELECTROLUMINESCENCE IN ULTRA-THIN SILICON FILM

被引：0
|
作者：
Suwa, Yuji [1 ]
Saito, Shin-Ichi [2 ]
机构：
[1] Hitachi Ltd, Adv Res Lab, Tokyo 1858601, Japan
[2] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan
来源：
PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON FOUNDATIONS OF QUANTUM MECHANICS IN THE LIGHT OF NEW TECHNOLOGY | 2009年
关键词：
optical gain; silicon; first principle calculation; PSEUDOPOTENTIALS; LUMINESCENCE;
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
Optical gains in electroluminescence of ultra-thin Si films sandwiched between SiO(2)s are calculated from first principles. The gain of the most efficient film is comparable to that of the bulk GaAs if one-order-of-magnitude higher density of carriers is assumed. The importance of the surface structure of the Si film is also investigated and the interface with quartz crystal is found to be favorable for efficient light-emission.
引用
收藏
页码：325 / +
页数：2
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