Experimental investigation of 4H-SiC bulk crystal growth

被引：8
|
作者：
Chourou, K
Anikin, M
Bluet, JM
Lauer, V
Guillot, G
Camassel, J
Juillaguet, S
Chaix, O
Pons, M
Madar, R
机构：
[1] CNRS, INPG, UMR 5628, LMGP, F-38402 St Martin Dheres, France
[2] Inst Natl Sci Appl, CNRS, UMR 5511, LPM, F-69621 Villeurbanne, France
[3] Univ Montpellier 2, GES, F-34095 Montpellier, France
[4] UJF, INPG, UMR 5614 CNRS, LTPCM, F-38402 St Martin Dheres, France
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
sublimation growth; polytypism; micro-Raman; wide band gap semiconductors;
D O I：
10.4028/www.scientific.net/MSF.264-268.17
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
4H-SiC single crystal ingots up to 1 inch in diameter have been grown by the Modified Lely Method. A growth sequence is proposed. The polytype study by Raman spectroscopy has shown that, in our configuration, 4H ingots could be reproducibly obtained on the (<000(1)over bar>)C face of a 4H-SiC seed. The ingot contamination by transition metals (Ti, V) is discussed in the light of low temperature photoluminescence.
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页码：17 / 20
页数：4
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