Experimental investigation of 4H-SiC bulk crystal growth

被引：8

作者：

Chourou, K

Anikin, M

Bluet, JM

Lauer, V

Guillot, G

Camassel, J

Juillaguet, S

Chaix, O

Pons, M

Madar, R

机构：

[1] CNRS, INPG, UMR 5628, LMGP, F-38402 St Martin Dheres, France

[2] Inst Natl Sci Appl, CNRS, UMR 5511, LPM, F-69621 Villeurbanne, France

[3] Univ Montpellier 2, GES, F-34095 Montpellier, France

[4] UJF, INPG, UMR 5614 CNRS, LTPCM, F-38402 St Martin Dheres, France

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

sublimation growth; polytypism; micro-Raman; wide band gap semiconductors;

D O I：

10.4028/www.scientific.net/MSF.264-268.17

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

4H-SiC single crystal ingots up to 1 inch in diameter have been grown by the Modified Lely Method. A growth sequence is proposed. The polytype study by Raman spectroscopy has shown that, in our configuration, 4H ingots could be reproducibly obtained on the (<000(1)over bar>)C face of a 4H-SiC seed. The ingot contamination by transition metals (Ti, V) is discussed in the light of low temperature photoluminescence.

引用

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页码：17 / 20

页数：4

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