Experimental investigation of 4H-SiC bulk crystal growth

被引：8
|
作者：
Chourou, K
Anikin, M
Bluet, JM
Lauer, V
Guillot, G
Camassel, J
Juillaguet, S
Chaix, O
Pons, M
Madar, R
机构：
[1] CNRS, INPG, UMR 5628, LMGP, F-38402 St Martin Dheres, France
[2] Inst Natl Sci Appl, CNRS, UMR 5511, LPM, F-69621 Villeurbanne, France
[3] Univ Montpellier 2, GES, F-34095 Montpellier, France
[4] UJF, INPG, UMR 5614 CNRS, LTPCM, F-38402 St Martin Dheres, France
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
sublimation growth; polytypism; micro-Raman; wide band gap semiconductors;
D O I：
10.4028/www.scientific.net/MSF.264-268.17
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
4H-SiC single crystal ingots up to 1 inch in diameter have been grown by the Modified Lely Method. A growth sequence is proposed. The polytype study by Raman spectroscopy has shown that, in our configuration, 4H ingots could be reproducibly obtained on the (<000(1)over bar>)C face of a 4H-SiC seed. The ingot contamination by transition metals (Ti, V) is discussed in the light of low temperature photoluminescence.
引用
下载
收藏
页码：17 / 20
页数：4
相关论文
共 50 条
  • [1] Experimental investigation of 4H-SiC bulk crystal growth
    Cent Natl de la Recherche, Scientifique, St Martin D'Heres, France
    Materials Science Forum, 1998, 264-268 (pt 1): : 17 - 20
  • [2] Enlargement Growth of Large 4H-SiC Bulk Single Crystal
    Kato, Tomohisa
    Miura, Tomonori
    Nagai, Ichiro
    Taniguchi, Hiroyoshi
    Kawashima, Hideaki
    Ozawa, Tetsuya
    Arai, Kazuo
    Okumura, Hajime
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 3 - 7
  • [3] Progress in 4H-SiC bulk growth
    Anikin, M
    Pernot, E
    Pelissier, B
    Pons, M
    Pisch, A
    Bernard, C
    Billon, T
    Faure, C
    Moulin, C
    Madar, R
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 21 - 24
  • [4] Progress in 4H-SiC bulk growth
    Anikin, Michail
    Pernot, Etienne
    Pelissier, Bernard
    Pons, Michel
    Pisch, Alexander
    Bernard, Claude
    Billon, Thierry
    Faure, Christian
    Moulin, Cécile
    Madar, Roland
    Materials Science Forum, 2001, 353-356 : 21 - 24
  • [5] Stability criteria for 4H-SiC bulk growth
    Straubinger, TL
    Bickermann, M
    Hofmann, D
    Weingärtner, R
    Wellmann, PJ
    Winnacker, A
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 25 - 28
  • [6] Stability criteria for 4H-SiC bulk growth
    Straubinger, T.L.
    Bickermann, M.
    Hofmann, D.
    Weingärtner, R.
    Wellmann, P.J.
    Winnacker, A.
    Materials Science Forum, 2001, 353-356 : 25 - 28
  • [7] Investigation of Graphene Growth on 4H-SiC
    Castaing, A.
    Guy, O. J.
    Lodzinski, M.
    Wilks, S. P.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 223 - 226
  • [8] Syntaxy and defect distribution during the bulk growth of 4H-SiC Single crystal
    Ankit Patel
    Mani Mittal
    D. V. Sridhara Rao
    A. K. Garg
    Renu Tyagi
    O. P. Thakur
    Journal of Materials Science: Materials in Electronics, 2021, 32 : 2187 - 2192
  • [9] Syntaxy and defect distribution during the bulk growth of 4H-SiC Single crystal
    Patel, Ankit
    Mittal, Mani
    Rao, D. V. Sridhara
    Garg, A. K.
    Tyagi, Renu
    Thakur, O. P.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021, 32 (02) : 2187 - 2192
  • [10] Impurity incorporation during sublimation bulk crystal growth of 6H- and 4H-SiC
    Ohtani, N
    Katsuno, M
    Takahashi, J
    Yashiro, H
    Kanaya, M
    Shinoyama, S
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 49 - 52
12345