Positron trapping at H- and D- ions in MgO crystals

被引：0

作者：

Monge, MA

Pareja, R

Gonzalez, R

Chen, Y

机构：

[1] Univ Carlos III Madrid, Dept Fis, E-28911 Leganes, Spain

[2] US DOE, ER 131, Div Mat Sci, Washington, DC USA

来源：

POSITRON ANNIHILATION: ICPA-11 - PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON POSITRON ANNIHILATION, KANSAS CITY, MISSOURI, USA, MAY 1997 | 1997年 / 255-2卷

关键词：

PsH; PsD; self-trapped positrons; positron trapping; MgO;

D O I：

10.4028/www.scientific.net/MSF.255-257.566

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-temperature positron lifetime and Doppler-broadening measurements Stave been performed on MgO single crystals containing either H- or D-. The temperature dependence of the mean positron lifetime and the parameter S indicate that the positron trapping coefficient for H-(D-) ions increases with temperature. A model involving delocalized, self-trapped, and bound states [e(+)-H-] and [e(+)-D-] for positrons predicts the temperature dependence observed for the annihilation parameters.

引用

下载

页码：566 / 568

页数：3

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