Positron trapping at H- and D- ions in MgO crystals

被引：0
|
作者：
Monge, MA
Pareja, R
Gonzalez, R
Chen, Y
机构：
[1] Univ Carlos III Madrid, Dept Fis, E-28911 Leganes, Spain
[2] US DOE, ER 131, Div Mat Sci, Washington, DC USA
来源：
POSITRON ANNIHILATION: ICPA-11 - PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON POSITRON ANNIHILATION, KANSAS CITY, MISSOURI, USA, MAY 1997 | 1997年 / 255-2卷
关键词：
PsH; PsD; self-trapped positrons; positron trapping; MgO;
D O I：
10.4028/www.scientific.net/MSF.255-257.566
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Low-temperature positron lifetime and Doppler-broadening measurements Stave been performed on MgO single crystals containing either H- or D-. The temperature dependence of the mean positron lifetime and the parameter S indicate that the positron trapping coefficient for H-(D-) ions increases with temperature. A model involving delocalized, self-trapped, and bound states [e(+)-H-] and [e(+)-D-] for positrons predicts the temperature dependence observed for the annihilation parameters.
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页码：566 / 568
页数：3
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