The reaction of carbon tetrachloride with gallium arsenide (001)

被引：12

作者：

Li, L ^{[1
]}

Gan, S ^{[1
]}

Han, BK ^{[1
]}

Qi, H ^{[1
]}

Hicks, RF ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90024 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 08期

关键词：

D O I：

10.1063/1.120620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon tetrachloride dissociatively adsorbs on the Ga-rich (4x2) reconstruction of GaAs (001) at 200 degrees C. Upon heating to 440 degrees C, the chlorine desorbs as GaCl, which etches the surface. Scanning tunneling micrographs reveal that this reaction transforms the (4x2) into a Ga-rich (3x2) structure that is interlaced with As-rich (2x4) phases. The (3x2) is well ordered, while the (2x4) phases exhibit a high degree of disorder. This work establishes the surface reaction pathway for carbon doping of GaAs with CCl4. (C) 1998 American Institute of Physics.

引用

页码：951 / 953

页数：3

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