Characterization of diphasic nc-Si/a-Si:H thin films and solar cells

被引：1

作者：

Zhang, SB ^{[1
]}

Xu, YY ^{[1
]}

Hu, ZH ^{[1
]}

Wang, YQ ^{[1
]}

Zeng, XB ^{[1
]}

Diao, HW ^{[1
]}

Wang, WJ ^{[1
]}

Kong, GL ^{[1
]}

Liao, XB ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190818

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystal. line state. The photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). In comparison with typical hydrogenated amorphous silicon (a-Si:H), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films a p-i-n junction solar cell has been prepared With an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm(2) (AM1.5, 100 mW/cm(2)).

引用

页码：1182 / 1185

页数：4

共 50 条

[21] Nonlinear absorption properties of nc-Si:H thin films
Guo, Z.N.
Guo, H.Q.
Li, S.C.
Huang, Y.Z.
Wang, Q.M.
Chinese Journal of Lasers B (English Edition), 2001, 10 (01): : 57 - 60
[22] The effect of double doped nc-Si:H tunnel recombination junction in a-Si:H/c-Si tandem solar cells
Lee, Sunhwa
Park, Jinjoo
Kim, Sangho
Kim, Youngkuk
Jeong, Chaehwan
Yi, Junsin
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (07)
[23] Structural studies of n-type nc-Si-QD thin films for nc-Si solar cells
Das, Debajyoti
Kar, Debjit
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2017, 111 : 115 - 122
[24] Structure of nc-Si:H films
Han, GR
Zhang, XW
Shi, GH
Shen, DK
Han, WQ
Du, PY
PHYSICS AND CHEMISTRY OF NANOSTRUCTURED MATERIALS, 2000, : 56 - 59
[25] Nonlinear Absorption Properties of nc-Si∶H Thin Films
GUO Zhenning GUO Hengqun (Department of Applied Physics
Chinese Journal of Lasers, 2001, (01) : 58 - 61
[26] Self-assembled nc-Si:H Thin Films by Low-pressure Planar Inductively Coupled Plasma CVD for Applications in nc-Si Solar Cells
Das, Debajyoti
Banerjee, Amit
PROCEEDINGS OF THE 59TH DAE SOLID STATE PHYSICS SYMPOSIUM 2014 (SOLID STATE PHYSICS), 2015, 1665
[27] Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cel
赵占霞
崔容强
孟凡英
于化丛
周之斌
JournalofShanghaiJiaotongUniversity, 2004, (04) : 81 - 84
[28] Fabrication of a-Si:H/nc-Si multilayer films using layer by layer technique and their properties
Afanasjev, VP
Gudovskikh, AS
Kleider, JP
Koughia, KV
Sazanov, AP
Gueunier, ME
Terukov, EI
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 : 1070 - 1074
[29] Computer simulation of a-Si:H/μc-Si:H diphasic silicon solar cells
Hao, HY
Kong, GL
Zeng, XB
Xu, Y
Diao, HW
Liao, XB
ACTA PHYSICA SINICA, 2005, 54 (07) : 3370 - 3374
[30] Microstructures of luminescent nc-Si by excimer laser annealing of a-Si:H
Huang, XF
Wu, W
Shen, HH
Li, W
Chen, XY
Xu, J
Chen, KJ
ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996, 1997, 452 : 803 - 808

← 1 2 3 4 5 →