Junction influence on drain current transients in partially-depleted SOI MOSFETs

被引：5
|
作者：
Ionescu, AM [1 ]
Chovet, A [1 ]
Chaudier, F [1 ]
机构：
[1] ENSERG, LPCS, CNRS, UMR 5531, F-38016 Grenoble, France
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 20期
关键词：
carrier lifetime; silicon-on-insulator; MOSFET;
D O I：
10.1049/el:19971169
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A model and a numerical-simulation-based demonstration of source and drain junction influence on drain current transients in floating-body partially-depleted (PD) SOI MOSFETs are presented. The investigated transient regime is a Zerbst-type one. It is shown that the junction contribution strongly influences carrier generation processes and therefore affects the accuracy of generation lifetime evaluation when the transistor channel length is reduced. In SOI MOSFETs, the thorough investigation of the contribution of generation processes is essentially two-dimensional.
引用
收藏
页码：1740 / 1742
页数：3
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