Microwave sintering of silicon nitride-based ceramics

被引：3
|
作者：
Paranosenkov, VP [1 ]
Bykov, YV [1 ]
Kholoptsev, VV [1 ]
Chikina, AA [1 ]
Shkarupa, IL [1 ]
Merkulova, AV [1 ]
机构：
[1] Russian Federat, Obninsk State Res Ctr, Tekhnol Res & Prod Assoc, Obninsk, Kaluga Region, Russia
来源：
REFRACTORIES AND INDUSTRIAL CERAMICS | 1997年 / 38卷 / 1-2期
关键词：
Boron Nitride; Silicon Nitride; Microwave Sinter; Filling Charge; Silicon Vapor;
D O I：
10.1007/BF02768226
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A silicon nitride-based ceramics (97% of the theoretical density, a bending strength limit of up to 700 MPa) is obtained using a microwave sintering method. The procedure of microwave sintering is 7-9 times shorter than the usual sintering process and requires lower temperatures 100-150 degrees C. The material obtained exhibits a highly disperse microstructure and a high content of alpha-Si3N4 phase.
引用
收藏
页码：13 / 15
页数：3
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