Microwave sintering of silicon nitride-based ceramics

被引：0
|
作者：
V. P. Paranosenkov
Yu. V. Bykov
V. V. Kholoptsev
A. A. Chikina
I. L. Shkarupa
A. V. Merkulova
机构：
[1] Obninsk State Research Center of the Russian Federation,Tekhnologiya Research and Production Association
来源：
Refractories and Industrial Ceramics | 1997年 / 38卷
关键词：
Boron Nitride; Silicon Nitride; Microwave Sinter; Filling Charge; Silicon Vapor;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A silicon nitride-based ceramics (97% of the theoretical density, a bending strength limit of up to 700 MPa) is obtained using a microwave sintering method. The procedure of microwave sintering is 7–9 times shorter than the usual sintering process and requires lower temperatures 100–150°C. The material obtained exhibits a highly disperse microstructure and a high content of α-Si3N4 phase.
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页码：13 / 15
页数：2
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