Microwave sintering of silicon nitride-based ceramics

被引：3

作者：

Paranosenkov, VP ^{[1
]}

Bykov, YV ^{[1
]}

Kholoptsev, VV ^{[1
]}

Chikina, AA ^{[1
]}

Shkarupa, IL ^{[1
]}

Merkulova, AV ^{[1
]}

机构：

[1] Russian Federat, Obninsk State Res Ctr, Tekhnol Res & Prod Assoc, Obninsk, Kaluga Region, Russia

来源：

REFRACTORIES AND INDUSTRIAL CERAMICS | 1997年 / 38卷 / 1-2期

关键词：

Boron Nitride; Silicon Nitride; Microwave Sinter; Filling Charge; Silicon Vapor;

D O I：

10.1007/BF02768226

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A silicon nitride-based ceramics (97% of the theoretical density, a bending strength limit of up to 700 MPa) is obtained using a microwave sintering method. The procedure of microwave sintering is 7-9 times shorter than the usual sintering process and requires lower temperatures 100-150 degrees C. The material obtained exhibits a highly disperse microstructure and a high content of alpha-Si3N4 phase.

引用

页码：13 / 15

页数：3

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