Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

被引：45
|
作者：
Winkelnkemper, M. [1 ]
Seguin, R.
Rodt, S.
Schliwa, A.
Reissmann, L.
Strittmatter, A.
Hoffmann, A.
Bimberg, D.
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 11期
关键词：
D O I：
10.1063/1.2743893
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [11 (2) over bar0] and [(2) over bar 100]. Realistic eight-band k(.)p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are formed either by the A or the B valence band. (c) 2007 American Institute of Physics.
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页数：4
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