Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

被引：45

作者：

Winkelnkemper, M. ^{[1
]}

Seguin, R.

Rodt, S.

Schliwa, A.

Reissmann, L.

Strittmatter, A.

Hoffmann, A.

Bimberg, D.

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 11期

关键词：

D O I：

10.1063/1.2743893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [11 (2) over bar0] and [(2) over bar 100]. Realistic eight-band k(.)p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are formed either by the A or the B valence band. (c) 2007 American Institute of Physics.

引用

页数：4

共 50 条

[11] Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire
Deshpande, Saniya
Heo, Junseok
Das, Ayan
Bhattacharya, Pallab
NATURE COMMUNICATIONS, 2013, 4
[12] Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire
Saniya Deshpande
Junseok Heo
Ayan Das
Pallab Bhattacharya
Nature Communications, 4
[13] Spin-polarized excitonic emission from quantum dots after electrical injection
Loeffler, W.
Hetterich, M.
Mauser, C.
Li, S.
Leuthold, J.
Kalt, H.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (06): : 1102 - 1105
[14] Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires
Gacevic, Zarko
Holmes, Mark
Chernysheva, Ekaterina
Mueller, Marcus
Torres-Pardo, Almundena
Veit, Peter
Bertrem, Frank
Christen, Juergen
Calbet, Jose Maria Gonzalez
Arakawa, Yasuhiko
Calleja, Enrique
Lazic, Snezana
ACS PHOTONICS, 2017, 4 (03): : 657 - 664
[15] Electrically driven single-photon emission from site-controlled InGaN/GaN quantum dots
Zhang, Lei
Teng, Chu-Hsiang
Ku, Pei-Cheng
Deng, Hui
2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2014,
[16] Two-photon absorption from single InGaN/GaN quantum dots
Jarjour, AF
Green, AM
Parker, TJ
Taylor, RA
Oliver, RA
Briggs, GAD
Kappers, MJ
Humphreys, CJ
Martin, RW
Watson, IM
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2): : 119 - 122
[17] GaN and InGaN quantum dots grown by MBE: from UV to red light emission
Grandjean, N
Damilano, B
Massies, J
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 397 - 402
[18] The effects of crystallographic orientation and strain on the properties of excitonic emission from wurtzite InGaN/GaN quantum wells
Khatsevich, S.
Rich, D. H.
JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (21)
[19] Polarized Emission From InGaN/GaN Single Nanorod Light-Emitting Diode
Zhi, Ting
Tao, Tao
Liu, Bin
Zhuang, Zhe
Dai, Jiangping
Li, Yi
Zhang, Guogang
Xie, Zili
Chen, Peng
Zhang, Rong
IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 28 (07) : 721 - 724
[20] Pure single-photon emission from an InGaN/GaN quantum dot
Holmes, M. J.
Zhu, T.
Massabuau, F. C. -P.
Jarman, J.
Oliver, R. A.
Arakawa, Y.
APL MATERIALS, 2021, 9 (06)

← 1 2 3 4 5 →