Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

被引：45

作者：

Winkelnkemper, M. ^{[1
]}

Seguin, R.

Rodt, S.

Schliwa, A.

Reissmann, L.

Strittmatter, A.

Hoffmann, A.

Bimberg, D.

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 11期

关键词：

D O I：

10.1063/1.2743893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [11 (2) over bar0] and [(2) over bar 100]. Realistic eight-band k(.)p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are formed either by the A or the B valence band. (c) 2007 American Institute of Physics.

引用

页数：4

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