The Boron-Oxygen (BiOi) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes

被引：7
|
作者：
Liao, C. [1 ]
Fretwurst, E. [1 ]
Garutti, E. [1 ]
Schwandt, J. [1 ]
Moll, M. [2 ]
Himmerlich, A. [2 ]
Gurimskaya, Y. [3 ]
Pintilie, I [4 ]
Nitescu, A. [4 ]
Li, Z. [5 ,6 ]
Makarenko, L. [7 ]
机构：
[1] Univ Hamburg, Inst Expt Phys, D-22761 Hamburg, Germany
[2] European Org Nucl Res CERN, CH-1211 Geneva, Switzerland
[3] Univ Geneva, Dept Phys Nucl & Corpusculaire DPNC, CH-1211 Geneva, Switzerland
[4] Natl Inst Mat Phys, Magurele 077125, Romania
[5] Ludong Univ, Coll Phys & Optoelect Engn, Yantai 264025, Peoples R China
[6] Zaozhuang Univ, Sch Optoelect Engn, Zaozhuang 277160, Peoples R China
[7] Belarusian State Univ, Minsk 220030, BELARUS
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2022年 / 69卷 / 03期
基金：
欧盟地平线“2020”;
关键词：
Annealing; Temperature measurement; Current measurement; Voltage measurement; Boron; Capacitance-voltage characteristics; Radiation effects; interstitial boron and interstitial oxygen (BiOi) defect; introduction rate; proton irradiation; thermally stimulated current (TSC) technique; THERMALLY STIMULATED CURRENT; CENTERS; SIMULATION; GENERATION; KINETICS; IMPURITY; RATES; DARK;
D O I：
10.1109/TNS.2022.3148030
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the thermally stimulated current (TSC) technique has been used to investigate the properties of the radiation-induced interstitial boron and interstitial oxygen defect complex by 23-GeV (E-kin) protons, including activation energy, defect concentration, as well as the annealing behavior. At first isothermal annealing (at 80 degrees C for 0-180 min) followed by isochronal annealing (for 15 min between 100 degrees C and 190 degrees C in steps of 10 degrees C), studies had been performed in order to get information about the thermal stability of the interstitial boron and interstitial oxygen defect in 50-Omega cm material after irradiation with 23-GeV protons to a fluence of 6.91 x 10(13) p/cm(2). The results are presented and discussed. Furthermore, the extracted data from TSC measurements are compared with the macroscopic properties derived from current-voltage and capacitance-voltage characteristics. In addition, the introduction rate of interstitial boron and interstitial oxygen defect as a function of the initial doping concentration was determined by exposing diodes with different resistivities (10, 50, 250, and 2 k Omega cm) to 23-GeV protons. These results are compared with data from TSC and deep-level transient spectroscopy measurements achieved by the team of the CERN-RD50 "Acceptor removal project."
引用
收藏
页码：576 / 586
页数：11
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