Lifetime recovery in p-type Czochralski silicon due to the reconfiguration of boron-oxygen complexes via a hole-emitting process

被引：16
|
作者：
Lim, Bianca [1 ]
Voronkov, Vladimir V. [2 ]
Falster, Robert [2 ]
Bothe, Karsten [1 ]
Schmidt, Jan [1 ]
机构：
[1] Inst Solar Energy Res Hamelin ISFH, D-31860 Emmerthal, Germany
[2] MEMC Elect Mat, I-39012 Merano, Italy
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 16期
关键词：
D O I：
10.1063/1.3581215
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The recovery of the light-degraded lifetime during annealing in darkness at 120 to 160 degrees C is examined in boron-doped p-type Czochralski silicon (Cz-Si) as well as in compensated Cz-Si codoped with boron and phosphorus. The rate constant for the recovery is found to be inversely proportional to the hole concentration for both boron-doped and compensated material. Our experiments confirm a model, in which the process of recovery is assigned to a reconfiguration of a boron-oxygen defect complex, whereby a hole is emitted. The activation energy for the recovery process is determined to be (1.36 +/- 0.06) eV. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3581215]
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