Lifetime recovery in p-type Czochralski silicon due to the reconfiguration of boron-oxygen complexes via a hole-emitting process

被引：16

作者：

Lim, Bianca ^{[1
]}

Voronkov, Vladimir V. ^{[2
]}

Falster, Robert ^{[2
]}

Bothe, Karsten ^{[1
]}

Schmidt, Jan ^{[1
]}

机构：

[1] Inst Solar Energy Res Hamelin ISFH, D-31860 Emmerthal, Germany

[2] MEMC Elect Mat, I-39012 Merano, Italy

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 16期

关键词：

D O I：

10.1063/1.3581215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The recovery of the light-degraded lifetime during annealing in darkness at 120 to 160 degrees C is examined in boron-doped p-type Czochralski silicon (Cz-Si) as well as in compensated Cz-Si codoped with boron and phosphorus. The rate constant for the recovery is found to be inversely proportional to the hole concentration for both boron-doped and compensated material. Our experiments confirm a model, in which the process of recovery is assigned to a reconfiguration of a boron-oxygen defect complex, whereby a hole is emitted. The activation energy for the recovery process is determined to be (1.36 +/- 0.06) eV. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3581215]

引用

页数：3