Recent Advances in Ga2O3 MOSFET Technologies

被引：0

作者：

Higashiwaki, Masataka ^{[1
]}

Wong, Man Hoi ^{[1
]}

Kamimura, Takafumi ^{[1
]}

Nakata, Yoshiaki ^{[1
]}

Lin, Chia-Hung ^{[1
]}

Lingaparthi, Ravikiran ^{[1
]}

Takeyama, Akinori ^{[2
]}

Makino, Takahiro ^{[2
]}

Ohshima, Takeshi ^{[2
]}

Hatta, Naoki ^{[3
]}

Yagi, Kuniaki ^{[3
]}

Goto, Ken ^{[4
,5
]}

Sasaki, Kohei ^{[4
]}

Watanabe, Shinya ^{[4
]}

Kuramata, Akito ^{[4
]}

Yamakoshi, Shigenobu ^{[4
]}

Konishi, Keita ^{[5
]}

Murakami, Hisashi ^{[5
]}

Kumagai, Yoshinao ^{[5
]}

机构：

[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukuikitamachi, Koganei, Tokyo 1848795, Japan

[2] Natl Inst Quantum & Radiol Sci & Technol, Takasaki, Gunma 3701292, Japan

[3] SICOXS Corp, Chiyoda Ku, Tokyo 1018629, Japan

[4] Tamura Corp, Sayama, Saitama 3501328, Japan

[5] Tokyo Univ Agr & Technol, Koganei, Tokyo 1848588, Japan

来源：

2018 76TH DEVICE RESEARCH CONFERENCE (DRC) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页数：1

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