β-Ga2O3 material properties, growth technologies, and devices: a review

Rapid progress in beta-gallium oxide (beta-Ga2O3) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention. beta-Ga2O3 appears particularly promising for power switching device applications because of its extremely large breakdown electric field and availability of large-diameter, high-quality wafers manufactured from melt-grown bulk single crystals. In this review, after introducing material properties of beta-Ga2O3 that are important for electronic devices, current status of bulk melt growth, epitaxial thin-film growth, and device processing technologies are introduced. Then, state-of-the-art beta-Ga2O3 Schottky barrier diodes and field-effect transistors are discussed, mainly focusing on development results of the author's group.