Evidence for deviations from a single-exponential distribution of conduction band tail states in hydrogenated amorphous silicon: A transient photocurrent analysis

被引：6

作者：

Webb, DP ^{[1
]}

Zou, XC

Chan, YC

Lam, YW

Lin, SH

Lin, XY

Lin, KX

O'Leary, SK

Lim, PK

机构：

[1] City Univ Hong Kong, Dept Elect Engn, Kowloon Tong, Hong Kong

[2] Shabtou Univ, Dept Phys, Shantou 515063, Guangdong, Peoples R China

[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[4] Hong Kong Baptist Univ, Dept Phys, Kowloon Tong, Hong Kong

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 105卷 / 04期

基金：

加拿大自然科学与工程研究理事会;

关键词：

disordered systems; semiconductors; thin films; electronic states;

D O I：

10.1016/S0038-1098(97)10104-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We employ transient photocurrent decay measurements to determine the distribution of conduction band tail states in hydrogenated amorphous silicon. It is found that these experimental results suggest the possibility of deviations from a single-exponential functional form. This is consistent with other more recent experimental determinations of the distribution of conduction band tail states in hydrogenated amorphous silicon. (C) 1997 Elsevier Science Ltd.

引用

页码：239 / 242

页数：4

共 36 条

[31] An improved analysis for band edge optical absorption spectra in hydrogenated amorphous silicon from optical and photoconductivity measurements
Jiao, L
Chen, I
Collins, RW
Wronski, CR
Hata, N
APPLIED PHYSICS LETTERS, 1998, 72 (09) : 1057 - 1059
[32] Energy distribution of gap states in hydrogenated amorphous silicon by post-transit photocurrent spectroscopy: Validity of an indium-tin oxide/silicon oxide double-layer gate
Sakata, I
Yamanaka, M
JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
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TOKUMARU, Y
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (06): : L1061 - L1064
[34] ELECTRON-TRANSPORT PARAMETERS AND TAIL-STATE DISTRIBUTION IN HYDROGENATED AMORPHOUS-SILICON OBTAINED FROM POSITION AND TAIL-STATE MATRIX SIMULATION OF DRIFT EXPERIMENTS
VANDERHAGHEN, R
PHYSICAL REVIEW B, 1988, 38 (15): : 10755 - 10775
[35] ASSESSMENT OF LATTICE-RELAXATION EFFECTS IN TRANSITIONS FROM MOBILITY GAP STATES IN HYDROGENATED AMORPHOUS-SILICON USING TRANSIENT PHOTOCAPACITANCE TECHNIQUES
GELATOS, AV
COHEN, JD
HARBISON, JP
APPLIED PHYSICS LETTERS, 1986, 49 (12) : 722 - 724
[36] DETERMINATION OF THE GAP-STATE DISTRIBUTION OF HYDROGENATED AMORPHOUS-SILICON ALLOYS FROM SUB-BAND-GAP ABSORPTION-MEASUREMENTS
PAYSON, JS
GUHA, S
PHYSICAL REVIEW B, 1985, 32 (02): : 1326 - 1329

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