Evidence for deviations from a single-exponential distribution of conduction band tail states in hydrogenated amorphous silicon: A transient photocurrent analysis

被引：6

作者：

Webb, DP ^{[1
]}

Zou, XC

Chan, YC

Lam, YW

Lin, SH

Lin, XY

Lin, KX

O'Leary, SK

Lim, PK

机构：

[1] City Univ Hong Kong, Dept Elect Engn, Kowloon Tong, Hong Kong

[2] Shabtou Univ, Dept Phys, Shantou 515063, Guangdong, Peoples R China

[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[4] Hong Kong Baptist Univ, Dept Phys, Kowloon Tong, Hong Kong

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 105卷 / 04期

基金：

加拿大自然科学与工程研究理事会;

关键词：

disordered systems; semiconductors; thin films; electronic states;

D O I：

10.1016/S0038-1098(97)10104-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We employ transient photocurrent decay measurements to determine the distribution of conduction band tail states in hydrogenated amorphous silicon. It is found that these experimental results suggest the possibility of deviations from a single-exponential functional form. This is consistent with other more recent experimental determinations of the distribution of conduction band tail states in hydrogenated amorphous silicon. (C) 1997 Elsevier Science Ltd.

引用

页码：239 / 242

页数：4

共 36 条

[21] Density-of-states distribution in AlGaN obtained from transient photocurrent analysis
Niehus, M
Schwarz, R
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Reynolds, S
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 206 - 208
[22] Determination of the conduction band offset between hydrogenated amorphous silicon and crystalline silicon from surface inversion layer conductance measurements
Kleider, J. P.
Gudovskikh, A. S.
Cabarrocas, P. Roca i
APPLIED PHYSICS LETTERS, 2008, 92 (16)
[23] DETERMINATION OF DISTRIBUTION OF STATES IN HYDROGENATED AMORPHOUS-SILICON FROM CAPACITANCE-VOLTAGE CHARACTERISTICS
BALBERG, I
GAL, E
JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2617 - 2627
[24] TIME-RESOLVED OPTICALLY DETECTED MAGNETIC-RESONANCE OF CONDUCTION-BAND TAIL ELECTRONS AND A-CENTERS IN HYDROGENATED AMORPHOUS-SILICON
TAKENAKA, H
MORIGAKI, K
SOLID STATE COMMUNICATIONS, 1985, 55 (04) : 279 - 283
[25] TIME-RESOLVED OPTICALLY DETECTED MAGNETIC-RESONANCE EXPERIMENT ON CONDUCTION-BAND TAIL ELECTRONS AND A CENTERS IN HYDROGENATED AMORPHOUS-SILICON
TAKENAKA, H
OGIHARA, C
MORIGAKI, K
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1988, 57 (11) : 3858 - 3867
[26] Deviations from square-root distributions of electronic states in hydrogenated amorphous silicon and their impact upon the resultant optical properties
Malik, SM
O'Leary, SK
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 336 (01) : 64 - 70
[27] EVIDENCE FOR LOCALIZED P-LIKE STATES AT THE CONDUCTION-BAND EDGE OF AMORPHOUS-SILICON NITRIDE FROM RESONANT PHOTOEMISSION
PERFETTI, P
QUARESIMA, C
CAPOZI, M
COLUZZA, C
FORTUNATO, G
PHYSICA SCRIPTA, 1987, 36 (01): : 184 - 186
[28] CALCULATION OF THE DENSITY OF THE DISTRIBUTION OF ELECTRONIC STATES IN THE CONDUCTION BAND FROM THE FUNDAMENTAL ABSORPTION SPECTRA OF AMORPHOUS SEMICONDUCTORS
Ikramov, Rustamjon G.
Muminov, Khurshidbek A.
Nuritdinova, Mashkhura A.
Sultonov, Bobur Q.
Kholmirzayev, Oybek T.
EAST EUROPEAN JOURNAL OF PHYSICS, 2023, (04): : 153 - 158
[29] Photocurrent decay from the steady-state in thin film hydrogenated amorphous silicon: Numerical simulation analysis of experimental results
Schmidt, Javier A.
Goldie, David M.
THIN SOLID FILMS, 2020, 696 (696)
[30] Distribution of the midgap density of states and their capture cross-sections in hydrogenated amorphous silicon deduced from space-charge-limited conduction in the dark and under illumination
Meaudre, R
Meaudre, M
PHILOSOPHICAL MAGAZINE LETTERS, 2005, 85 (04) : 185 - 192

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