Evidence for deviations from a single-exponential distribution of conduction band tail states in hydrogenated amorphous silicon: A transient photocurrent analysis

被引：6
|
作者：
Webb, DP [1 ]
Zou, XC
Chan, YC
Lam, YW
Lin, SH
Lin, XY
Lin, KX
O'Leary, SK
Lim, PK
机构：
[1] City Univ Hong Kong, Dept Elect Engn, Kowloon Tong, Hong Kong
[2] Shabtou Univ, Dept Phys, Shantou 515063, Guangdong, Peoples R China
[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[4] Hong Kong Baptist Univ, Dept Phys, Kowloon Tong, Hong Kong
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 105卷 / 04期
基金：
加拿大自然科学与工程研究理事会;
关键词：
disordered systems; semiconductors; thin films; electronic states;
D O I：
10.1016/S0038-1098(97)10104-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We employ transient photocurrent decay measurements to determine the distribution of conduction band tail states in hydrogenated amorphous silicon. It is found that these experimental results suggest the possibility of deviations from a single-exponential functional form. This is consistent with other more recent experimental determinations of the distribution of conduction band tail states in hydrogenated amorphous silicon. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码：239 / 242
页数：4
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