Highly durable and flexible gallium-based oxide conductive-bridging random access memory

被引：44

作者：

Gan, Kai-Jhih ^{[1
]}

Liu, Po-Tsun ^{[2
,3
]}

Chien, Ta-Chun ^{[2
,3
]}

Ruan, Dun-Bao ^{[1
]}

Sze, Simon M. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

来源：

SCIENTIFIC REPORTS | 2019年 / 9卷 / 1期

关键词：

THIN-FILM TRANSISTORS; RESISTIVE SWITCHING MEMORY; LOW-POWER; PERFORMANCE; TUNGSTEN; LAYER; IMPROVEMENT; DEVICE; CBRAM;

D O I：

10.1038/s41598-019-50816-7

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga2O3/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>10(5)), low operation voltage, high endurance (>1.4 x 10(2) cycles), and large retention memory window (>10(5)). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the Ga2O3 layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits.

引用

页数：7

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