Performance Improvement of Conductive Bridging Random Access Memory by Electrode Alloying

被引：8

作者：

Qiao, Leilei ^{[1
]}

Sun, Yiming ^{[1
]}

Song, Cheng ^{[1
]}

Yin, Siqi ^{[1
]}

Wan, Qin ^{[1
]}

Liu, Jialu ^{[1
]}

Wang, Rui ^{[1
]}

Zeng, Fei ^{[1
]}

Pan, Feng ^{[1
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2020年 / 124卷 / 21期

基金：

国家重点研发计划;

关键词：

MEMRISTIVE DEVICES; RESISTIVE MEMORY; AG-CU; MECHANISMS; BEHAVIOR; DENSITY; GROWTH;

D O I：

10.1021/acs.jpcc.0c01785

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Large parameter variability is identified as one of the main problems in conductive bridging random access memory (CBRAM) at the device level impeding large-scale commercial applications. Here, we achieve performance improvement by electrode alloying in sandwich-structure Ag65Cu35/HfOx/Pt devices. Cu conductive filaments have been demonstrated to be responsible for the resistive switching behaviors in Ag-Cu alloy electrode CBRAM via direct observation by transmission electron microscopy. Compared with Cu/HfOx/Pt devices, the alloy electrode devices show lower forming and SET voltages, better SET voltage distribution uniformity, and a faster response speed. The alloy phase diagram combined with the galvanic effect is proposed to explain the formation of Cu conductive filaments and the improved switching uniformity in CBRAM with an Ag-Cu alloy electrode. The use of an Ag-Cu alloy electrode and understanding its role would advance the implementation of high-density integration of CBRAM.

引用

页码：11438 / 11443

页数：6

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