Low-frequency noise in SiO2/AlGaN/GaN heterostructures on SiC and sapphire substrates

被引：0

作者：

Pala, N ^{[1
]}

Gaska, R

Shur, M

Yang, JW

Khan, MA

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA

来源：

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 2000年 / 5卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The low-frequency no ise in GaN-based Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors (MOS-HFETs) and HFETs on sapphire and n-SiC substrates were studied. Hooge parameter at zero gate bias was calculated about 8 x 10(-4) for both types of the devices. The AlGaN/GaN MOS-HFETs exhibited extremely low gate leakage current and much lower noise at both positive and negative gate biases. These features demonstrate the high quality of the SiO2/AlCaN heterointerface and feasibility of this technology for high-power microwave transmitter and high-power, high-temperature switches.

引用

页数：6

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