Performance and limitations of AlGaN/GaN HFETs grown on sapphire and SiC substrates

被引：4
|
作者：
Vescan, A [1 ]
Dietrich, R [1 ]
Wieszt, A [1 ]
Lee, JS [1 ]
Schurr, A [1 ]
Leier, H [1 ]
Daumiller, I [1 ]
Käb, N [1 ]
Kohn, E [1 ]
机构：
[1] DaimlerChrysler AG, Res & Technol, D-89013 Ulm, Germany
来源：
2000 IEEE/CORNELL CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/CORNEL.2000.902546
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：247 / 256
页数：10
相关论文
共 50 条
  • [1] Channel mobility in AlGaN/GaN HFETs on SiC and sapphire substrates
    Uren, MJ
    Martin, T
    Hughes, BT
    Hilton, KP
    Wells, A
    Balmer, RS
    Herbert, DC
    Keir, AM
    Wallis, DJ
    Pidduck, AJ
    Missous, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 194 (02): : 468 - 471
  • [2] Channel mobility in AlGaN/GaN HFETs on SiC and sapphire substrates
    Uren, M.J.
    Martin, T.
    Hughes, B.T.
    Hilton, K.P.
    Wells, A.
    Balmer, R.S.
    Herbert, D.C.
    Keir, A.M.
    Wallis, D.J.
    Pidduck, A.J.
    Missous, M.
    Physica Status Solidi (A) Applied Research, 2002, 194 (2 SPEC.): : 468 - 471
  • [3] Thermal modeling and measurement of AlGaN/GaN HFETs built on sapphire and SiC substrates
    Park, J
    Kakovitch, D
    Shin, MW
    Lee, CC
    53RD ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 2003 PROCEEDINGS, 2003, : 438 - 442
  • [4] The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates
    Arslan, Engin
    Butun, Serkan
    Lisesivdin, S. Bora
    Kasap, Mehmet
    Ozcelik, Suleyman
    Ozbay, Ekmel
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (10)
  • [5] Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates
    Ketteniss, N.
    Khoshroo, L. Rahimzadeh
    Eickelkamp, M.
    Heuken, M.
    Kalisch, H.
    Jansen, R. H.
    Vescan, A.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (07)
  • [6] Novel high power AlGaN/GaN HFETs on SiC substrates
    Gaska, R
    Yang, J
    Osinsky, A
    AsifKhan, M
    Shur, MS
    INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 565 - 568
  • [7] Thermal effects of substrates on the performance of AlGaN/GaN HFETs
    Park, J
    Lee, CC
    Kim, JW
    Lee, JS
    Hwang, WJ
    Shin, MW
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2364 - 2367
  • [8] Modeling and limitations of AlGaN/GaN HFETs
    Trew, RJ
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 432 - 435
  • [9] Low 1/f noise in AlGaN/GaN HFETs on SiC substrates
    Rumyantsev, S
    Levinshtein, ME
    Gaska, R
    Shur, MS
    Khan, A
    Yang, JW
    Simin, G
    Ping, A
    Adesida, T
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 201 - 204
  • [10] AlGaN/GaN HEMTs grown on SiC substrates
    Binari, SC
    Redwing, JM
    Kelner, G
    Kruppa, W
    ELECTRONICS LETTERS, 1997, 33 (03) : 242 - 243
12345