Performance and limitations of AlGaN/GaN HFETs grown on sapphire and SiC substrates

被引：4

作者：

Vescan, A ^{[1
]}

Dietrich, R ^{[1
]}

Wieszt, A ^{[1
]}

Lee, JS ^{[1
]}

Schurr, A ^{[1
]}

Leier, H ^{[1
]}

Daumiller, I ^{[1
]}

Käb, N ^{[1
]}

Kohn, E ^{[1
]}

机构：

[1] DaimlerChrysler AG, Res & Technol, D-89013 Ulm, Germany

来源：

2000 IEEE/CORNELL CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/CORNEL.2000.902546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：247 / 256

页数：10

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