Plasma damage reduction by using ISSG gate oxides

被引：1
|
作者：
Cellere, G [1 ]
Valentini, MG [1 ]
Caminati, M [1 ]
Vitali, ME [1 ]
Moro, A [1 ]
Paccagnella, A [1 ]
机构：
[1] Univ Padua, Dipartimento Elettr & Informat, Padua, Italy
来源：
2003 8TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE | 2003年
关键词：
D O I：
10.1109/PPID.2003.1200916
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：65 / 68
页数：4
相关论文
共 50 条
  • [1] Plasma charging damage on ultrathin gate oxides
    Park, D
    Hu, CM
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (01) : 1 - 3
  • [2] Characterization of plasma charging damage in ultrathin gate oxides
    Lin, HC
    Wang, MF
    Chen, CC
    Hsien, SK
    Chien, CH
    Huang, TY
    Chang, CY
    Chao, TS
    1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, : 312 - 317
  • [3] Evaluation of plasma charging damage in ultrathin gate oxides
    Lin, HC
    Chen, CC
    Chien, CH
    Hsein, SK
    Wang, MF
    Chao, TS
    Huang, TY
    Chang, CY
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (03) : 68 - 70
  • [4] Plasma charging damage on ultra-thin gate oxides
    Park, D
    Hu, C
    1997 2ND INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1997, : 15 - 18
  • [5] Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides
    Chen, CC
    Lin, HC
    Chang, CY
    Huang, TY
    Chien, CH
    Liang, MS
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2000, 3 (02) : 103 - 105
  • [6] CHARGING DAMAGE TO GATE OXIDES IN AN O-2 MAGNETRON PLASMA
    FANG, SC
    MCVITTIE, JP
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (10) : 4865 - 4872
  • [7] Charging damage to gate oxides in an O2 magnetron plasma
    1600, (72):
  • [8] Reduction of thermal damage in ultrathin gate oxides after intrinsic dielectric breakdown
    Lombardo, S
    La Magna, A
    Crupi, I
    Gerardi, C
    Crupi, F
    APPLIED PHYSICS LETTERS, 2001, 79 (10) : 1522 - 1524
  • [9] Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides
    Department of Electrical Engineering, National University of Singapore, Singapore 119260, Singapore
    不详
    不详
    不详
    IEEE Electron Device Lett, 5 (238-240):
  • [10] Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides
    Guan, H
    Zhang, YH
    Jie, BB
    He, YD
    Li, MF
    Dong, Z
    Xie, J
    Wang, JLF
    Yen, AC
    Sheng, GTT
    Li, WD
    IEEE ELECTRON DEVICE LETTERS, 1999, 20 (05) : 238 - 240
12345