Growth and structural study of nanocrystalline titanium oxide and zirconium oxide thin films deposited at low temperatures

被引:0
|
作者
Tay, B. K. [1 ]
Zhao, Z. W. [1 ]
Lau, S. P. [1 ]
Gao, J. X. [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源
关键词
titanium oxide; zirconium oxide; XRD; Raman;
D O I
10.1142/S0219581X05003565
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Titanium oxide and zirconium oxide thin films were deposited at low temperatures (not exceeding 350 degrees C) by off-plane filtered cathodic vacuum arc (FCVA). The film structures were studied by XRD and Raman spectra. For titanium oxide thin films, amorphous structure remains up to 230 degrees C, and anatase film with the crystallite size of 16 nm is observed at 330 degrees C as confirmed by XRD and Raman analysis. For zirconium oxide, the film structure develops from amorphous at room temperature to polycrystalline state at 150 degrees C and above. Moreover, for the crystallized films, preferred orientation is along [-111] direction. At 150 degrees C the films possess nano-sized crystallites (less than 15 nm). For these two kinds of metal oxide thin films, surface roughness both increases with the growth temperature.
引用
收藏
页码:795 / 801
页数:7
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