Effect of doping profile and the work function variation on performance of double-gate TFET

被引：0

作者：

Elgamal, Muhammad ^{[1
]}

Sinjab, Aya ^{[1
]}

Fedawy, Mostafa ^{[1
]}

Shaker, Ahmed ^{[2
]}

机构：

[1] Arab Acad Sci Technol & Maritime Transport, Cairo 11799, Egypt

[2] Ain Shams Univ, Cairo 11535, Egypt

来源：

INTERNATIONAL JOURNAL OF INTEGRATED ENGINEERING | 2019年 / 11卷 / 07期

关键词：

Drain Work Function; Uniform doping; Gaussian doping; On current; Ambipolar current and Subthreshold Swing;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A Abstract Tunnel Field Effect Transistor (TFET) can be considered as one of the promising transistors because it can switch ON and OFF at lower voltages than the operation voltage of the metal oxide semiconductor field effect transistor (MOSFET). This paper presents the effects of gate electrode work function and the doping profile terminating within and outside the drain on the ambipolar current, the ION/IOFF ratio, and the subthreshold swing. The results show that. Gaussian doping profile terminating within the drain is the most promising for on/off ratio. All the simulations and results have been performed and obtained with the help of ATLAS device simulator (Silvaco) and MATLAB.

引用

页码：40 / 46

页数：7

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