Performance Improvement of Heterojunction Double Gate Drain Overlapped TFET using Gaussian Doping

In this paper, for the first time, a Ge/Si heterojunction pocket doped double-gate-overlapped over drain tunnel FET (HP-DGODTFET) with Gaussian doping on drain side has been investigated for low-power and high frequency applications. The proposed device offers higher I-ON/I-OFF ratio in the order of (10(14)), steeper sub threshold swing of (14 mV/decade) and better analog/RF performance metrics using low band gap material. Further, we have analysed DC and analog/RF performance parameters for pocket doped double gate TFET (P-DGTFET), heterojunction uniform doped double gate-overlapped over drain TFET (H-DGODTFET), and heterojunction pocket doped double gate overlapped over drain TFET (HP-DGODTFET) with Gaussian doping on drain side in term of transfer characteristics, transconductance (g(m)), gate to source capacitance (C-gs), gate to drain capacitance (C-gd), cut-off frequency (f(T)). All the simulations for all the possible devices have been performed with the help of ATLAS device simulator.