Hole-spin pumping and repumping in a p-type δ-doped InAs quantum dot

被引：6
|
作者：
Lagoudakis, Konstantinos G. [1 ]
Fischer, Kevin A. [1 ]
Sarmiento, Tomas [1 ]
Mueller, Kai [1 ]
Vuckovic, Jelena [1 ]
机构：
[1] Stanford Univ, Edward L Ginzton Lab, Stanford, CA 94305 USA
来源：
PHYSICAL REVIEW B | 2014年 / 90卷 / 12期
基金：
瑞士国家科学基金会;
关键词：
D O I：
10.1103/PhysRevB.90.121402
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have grown high quality p-type delta-doped InAs quantum dots and have demonstrated coherent spin pumping and repumping of a hole spin in a positively charged quantum dot by means of a single-laser driving scheme under a high magnetic field in the Voigt configuration. Modeling of our system shows excellent qualitative agreement with the experimental findings and further explores the performance of the single-laser scheme for spin pumping and repumping.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] Coherent Optical Control of the Spin of a Single Hole in an InAs/GaAs Quantum Dot
    Godden, T. M.
    Quilter, J. H.
    Ramsay, A. J.
    Wu, Yanwen
    Brereton, P.
    Boyle, S. J.
    Luxmoore, I. J.
    Puebla-Nunez, J.
    Fox, A. M.
    Skolnick, M. S.
    PHYSICAL REVIEW LETTERS, 2012, 108 (01)
  • [22] Wide wavelength conversion in P-type doped quantum dot semiconductor optical amplifiers
    Qasaimeh, Omar
    OPTICS COMMUNICATIONS, 2013, 305 : 1 - 7
  • [23] Theory of hole-spin qubits in strained germanium quantum dots
    Terrazos, L. A.
    Marcellina, E.
    Wang, Zhanning
    Coppersmith, S. N.
    Friesen, Mark
    Hamilton, A. R.
    Hu, Xuedong
    Koiller, Belita
    Saraiva, A. L.
    Culcer, Dimitrie
    Capaz, Rodrigo B.
    PHYSICAL REVIEW B, 2021, 103 (12)
  • [24] Counting statistics of hole transfer in a p-type GaAs quantum dot with dense excitation spectrum
    Komijani, Y.
    Choi, T.
    Nichele, F.
    Ensslin, K.
    Ihn, T.
    Reuter, D.
    Wieck, A. D.
    PHYSICAL REVIEW B, 2013, 88 (03)
  • [25] Enhanced nonradiative Auger recombination in p-type modulation doped InAs/GaAs quantum dots
    Jang, Y. D.
    Badcock, T. J.
    Mowbray, D. J.
    Skolnick, M. S.
    Park, J.
    Lee, D.
    Liu, H. Y.
    Hopkinson, M.
    Hogg, R. A.
    Andreev, A. D.
    APPLIED PHYSICS LETTERS, 2008, 93 (10)
  • [26] Non-Markovian hole spin kinetics in p-type GaAs quantum wells
    Zhang, P.
    Wu, M. W.
    PHYSICAL REVIEW B, 2007, 76 (19)
  • [27] Noise, gain, and capture probability of p-type InAs-GaAs quantum-dot and quantum dot-in-well infrared photodetectors
    Wolde, Seyoum
    Lao, Yan-Feng
    Perera, A. G. Unil
    Zhang, Y. H.
    Wang, T. M.
    Kim, J. O.
    Schuler-Sandy, Ted
    Tian, Zhao-Bing
    Krishna, S.
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (24)
  • [28] Hole subband structure in single and double p-type δ-doped diamond quantum wells
    Rodriguez-Vargas, I.
    Duque, C. A.
    Mora-Ramos, M. E.
    Velasco, V. R.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2, 2007, 4 (02): : 415 - +
  • [29] Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001)
    Ajjel, R
    Baira, M
    Gassoumi, M
    Maaref, H
    Salem, B
    Brémond, G
    Gendry, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (03) : 311 - 315
  • [30] Impact of quantum dot parameters on the performance of p-type quantum dot infrared photodetectors
    Rathi, Kiran
    Gupta, Saral K.
    Kumar, Jitendra
    Negi, Chandra Mohan Singh
    SUPERLATTICES AND MICROSTRUCTURES, 2021, 156
12345