Enhanced nonradiative Auger recombination in p-type modulation doped InAs/GaAs quantum dots

被引：18
|
作者：
Jang, Y. D. [1 ]
Badcock, T. J. [1 ]
Mowbray, D. J. [1 ]
Skolnick, M. S.
Park, J. [2 ]
Lee, D. [2 ]
Liu, H. Y. [3 ]
Hopkinson, M. [3 ]
Hogg, R. A. [3 ]
Andreev, A. D. [4 ]
机构：
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
[4] Univ Surrey, Dept Phys, Surrey GU2 7XH, England
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.2975961
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The photoluminescence efficiency and carrier recombination time of p-type modulation doped InAs/GaAs quantum dots (QDs) have been measured as a function of doping density. At 10 K the carrier lifetime decreases from 1200 to 350 ps over the doping range of 0 and 30 acceptors/QD. This behavior is attributed to an enhancement of the Auger-type recombination due to the presence of extrinsic holes in the QDs. The hole density dependence of the Auger process is found to be weaker than in bulk semiconductors and quantum wells (QWs). (c) 2008 American Institute of Physics.
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