Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films

被引：24

作者：

Lee, Kang Hyuck ^{[1
]}

Shin, Hyeon-Jin ^{[2
]}

Kumar, Brijesh ^{[3
]}

Kim, Han Sol ^{[1
]}

Lee, Jinyeong ^{[4
]}

Bhatia, Ravi ^{[4
]}

Kim, Sang-Hyeob ^{[5
]}

Lee, In-Yeal ^{[4
]}

Lee, Hyo Sug ^{[2
]}

Kim, Gil-Ho ^{[4
]}

Yoo, Ji-Beom ^{[1
,4
]}

Choi, Jae-Young ^{[2
]}

Kim, Sang-Woo ^{[1
,4
]}

机构：

[1] Sungkyunkwan Univ SKKU, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[2] Samsung Adv Inst Technol, Yongin 446712, South Korea

[3] Natl Univ Singapore, NUSNNI NanoCore, Singapore 117580, Singapore

[4] Sungkyunkwan Univ SKKU, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

[5] Elect & Telecommun Res Inst, Taejon 305700, South Korea

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2014年 / 53卷 / 43期

基金：

新加坡国家研究基金会;

关键词：

boron nitride; chemical vapor deposition; electron microscopy; graphene; nanostructures; ANISOTROPIC THERMAL-EXPANSION; ATOMIC LAYERS; HETEROSTRUCTURES; CRYSTALLINE; NANOSHEETS; GROWTH; MOS2;

D O I：

10.1002/anie.201405762

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Unintentionally formed nanocrystalline graphene (nc-G) can act as a useful seed for the large-area synthesis of a hexagonal boron nitride (h-BN) thin film with an atomically flat surface that is comparable to that of exfoliated single-crystal h-BN. A wafer-scale dielectric h-BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc-G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc-G-tailored h-BN thin film was systematically analyzed. This approach provides a novel method for preparing high-quality two-dimensional materials on a large surface.

引用

页码：11493 / 11497

页数：5

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