An Inverse Class-F GaN HEMT Power Amplifier with 78 % PAE at 3.5 GHz

被引：0

作者：

Saad, Paul ^{[1
]}

Nemati, Hossein Mashad ^{[1
]}

Thorsell, Mattias ^{[1
]}

Andersson, Kristoffer ^{[1
]}

Fager, Christian ^{[1
]}

机构：

[1] Chalmers Tech Univ, Sch Microtechnol & Nanosci, GigaHertz Ctr, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

来源：

2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3 | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design and implementation of an inverse class F power amplifier (PA) using a high power GaN HEMT transistor. For a 3.5 GHz continuous wave (CW) signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78 %, a drain efficiency of 82 %, a gain of 12 dB, and an output power of 11W. Moreover, drain efficiency is maintained over 60 % and the output power level is higher than 10W over 300 MHz bandwidth. To our knowledge, the presented power amplifier represents the highest efficiency for all switching mode PAS that have been reported for high power applications at frequencies above 2 GHz.

引用

页码：496 / 499

页数：4

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