Pulse Operation of an Inverse Class-F GaN Power Amplifier

被引：0
|
作者：
Kim, Hyoungjong [1 ]
Choi, Gilwong [1 ]
Choi, Jinjoo [1 ]
机构：
[1] Kwangwoon Univ, Dept Wireless Commun Engn, Seoul 139701, South Korea
来源：
2008 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an inverse class-F power amplifier (PA) based on gallium nitride (GaN) high electron mobility transistor (HEMT) at 1 GHz. The implemented PA has a peak power-added-efficiency (PAE) of 74.1 %, drain efficiency (DE) of 77.36 %, and a gain of 13.76 dB at an output power of 39.58 dBm with a continuous wave operation at 28 volts. We have carried out the experiments with various pulsed operating conditions. A RF performance peak PAE of 74.28 % with drain efficiency of 77.57 % and a gain of 13.73 dB, at an output power of 39.66 dBm, was obtained at a pulse width of 100 X with a duty of 10 %. To evaluate the linearity of the inverse class-F amplifier, two-tone measurements have been tested. At a tone spacing of 100 kHz, the measured third-order intermodulation distortion (IMD3) was 13.2 dBc at peak PAE.
引用
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页码：858 / 861
页数：4
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