X-band inverse class-F GaN internally-matched power amplifier

被引：1

作者：

Zhao, Bo-Chao ^{[1
]}

Lu, Yang ^{[1
]}

Han, Wen-Zhe ^{[1
]}

Zheng, Jia-Xin ^{[2
]}

Zhang, Heng-Shuang ^{[1
]}

Ma, Pei-jun ^{[1
]}

Ma, Xiao-Hua ^{[2
]}

Hao, Yue ^{[1
,2
]}

机构：

[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China

[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS B | 2016年 / 25卷 / 09期

基金：

国家高技术研究发展计划(863计划);

关键词：

GaN internally-matched power amplifier; inverse class-F; compensation design; X-band power amplifier;

D O I：

10.1088/1674-1056/25/9/097306

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An X-band inverse class-F power amplifier is realized by a 1-mm AlGaN/GaN high electron mobility transistor (HEMT). The intrinsic and parasitic components inside the transistor, especially output capacitor C-ds, influence the harmonic impedance heavily at the X-band, so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane. Experiment results show that, in the continuous-wave mode, the power amplifier achieves 61.7% power added efficiency (PAE), which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT. To the best of our knowledge, this is the first inverse class-F GaN internally-matched power amplifier, and the PAE is quite high at the X-band.

引用

页数：5

共 50 条

[1] X-band inverse class-F GaN internally-matched power amplifier
赵博超
卢阳
韩文哲
郑佳欣
张恒爽
马佩军
马晓华
郝跃
[J]. Chinese Physics B, 2016, (09) : 532 - 536
[2] High Power X-band Internally-matched AlGaN/GaN HEMT
Wang, Y.
Zhang, Z. G.
Feng, Z.
Li, J. Q.
Song, J. B.
Feng, Z. H.
Cai, S. J.
[J]. APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5, 2008, : 2091 - 2093
[3] Wide-Bandwidth Power-Combining and Inverse Class-F GaN Power Amplifier at X-Band
Stameroff, Alexander N.
Ta, Hai H.
Anh-Vu Pham
Leoni, Robert E., III
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (03) : 1291 - 1300
[4] Tunable Class-F high power amplifier at X-Band using GaN HEMT
Ceylan, Osman
Yagci, H. Bulent
Paker, Selcuk
[J]. TURKISH JOURNAL OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES, 2018, 26 (05) : 2327 - 2334
[5] A high efficiency X-band internally-matched GaN power amplifier using on-chip harmonic tuning Technology
Gu, Liming
Yang, Baojing
Feng, Wenjie
Che, Wenquan
[J]. 2022 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS, IMWS-AMP, 2022,
[6] GaN X-band 43% Internally-Matched FET with 60W Output Power
Kimura, M.
Yamauchi, K.
Yamanaka, K.
Noto, H.
Kuwata, E.
Otsuka, H.
Inoue, A.
Kamo, Y.
Miyazaki, M.
[J]. APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5, 2008, : 238 - +
[7] A C-Band Internally-Matched High Efficiency GaN Power Amplifier
Ma Xiao-Hua
Wei Jia-Xing
Cao Meng-Yi
Lu Yang
Zhao Bo-Chao
Dong Liang
Wang Yi
Hao Yue
[J]. CHINESE PHYSICS LETTERS, 2014, 31 (10)
[8] A high power X-band internally-matched power amplifier with 705 W peak power and 51.7% PAE
Gu, Liming
Feng, Wenjie
Zhou, Sutong
Tang, Shijun
Wang, Shuai
[J]. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2021, 31 (12)
[9] A 15-W X-Band Inverse Class-F GaN Power Amplifier With Second-Harmonic Input Tuning
Ghanaatian, Ahmad
Abrishamifar, Adib
Rahmati, Abdolreza
Alizadeh, Amirreza
[J]. IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2023, 33 (09): : 1317 - 1320
[10] A 2 W 45 % PAE X-Band GaN HEMT Class-F MMIC Power Amplifier
Senju, Tomohiro
Takagi, Kazutaka
Kimura, Hideki
[J]. 2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC), 2018, : 956 - 958

← 1 2 3 4 5 →