An Inverse Class-F GaN HEMT Power Amplifier with 78 % PAE at 3.5 GHz

被引：0

作者：

Saad, Paul ^{[1
]}

Nemati, Hossein Mashad ^{[1
]}

Thorsell, Mattias ^{[1
]}

Andersson, Kristoffer ^{[1
]}

Fager, Christian ^{[1
]}

机构：

[1] Chalmers Tech Univ, Sch Microtechnol & Nanosci, GigaHertz Ctr, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

来源：

2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3 | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design and implementation of an inverse class F power amplifier (PA) using a high power GaN HEMT transistor. For a 3.5 GHz continuous wave (CW) signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78 %, a drain efficiency of 82 %, a gain of 12 dB, and an output power of 11W. Moreover, drain efficiency is maintained over 60 % and the output power level is higher than 10W over 300 MHz bandwidth. To our knowledge, the presented power amplifier represents the highest efficiency for all switching mode PAS that have been reported for high power applications at frequencies above 2 GHz.

引用

页码：496 / 499

页数：4

共 50 条

[41] Efficiency Enhanced Class-F Doherty Power Amplifier at 3.5GHz for LTE-Advanced Application
Fan, Cheng-zhi
Zhu, Xiao-Wei
Xia, Jing
Zhang, Lei
[J]. 2013 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC 2013), 2013, : 707 - 709
[42] Quasi Inverse Class-F X-Band Highly Efficient Power Amplifier with 51.8% Peak PAE in SiGe
Redois, S.
Kerherve, E.
Ghiotto, A.
Louis, B.
Petit, V.
Mancuso, Y.
[J]. 2019 14TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2019), 2019, : 278 - 281
[43] A 2.45-GHz Class-F Power Amplifier for CDMA Systems
Ismail, A. A.
Younis, A. T.
Abduljabbar, N. A.
Mohammed, B. A.
Abd-Alhameed, R. A.
[J]. 2015 INTERNET TECHNOLOGIES AND APPLICATIONS (ITA) PROCEEDINGS OF THE SIXTH INTERNATIONAL CONFERENCE (ITA 15), 2015, : 428 - 433
[44] Class-F and Inverse Class-F Power Amplifier Loading Networks Design Based upon Transmission Zeros
Beltran, Ramon A.
[J]. 2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2014,
[45] A High-Efficiency GaN HEMT Hybrid Class-E Power Amplifier for 3.5 GHz WiMAX Applications
Lee, Mun-Woo
Lee, Yong-Sub
Jeong, Yoon-Ha
[J]. 2008 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, 2008, : 230 - 233
[46] Inverse Class-F RF Power Amplifier Design Using 10W GaN HFMT
Fauzi, Amirah
Yusoff, Zubaida
Sadeque, Md Golam
[J]. PROCEEDINGS OF THE 2019 IEEE REGIONAL SYMPOSIUM ON MICRO AND NANOELECTRONICS (RSM), 2019, : 20 - 23
[47] High-efficiency concurrent dual-band class-F and inverse class-F power amplifier
Ding, Y.
Guo, Y. X.
Liu, F. L.
[J]. ELECTRONICS LETTERS, 2011, 47 (15) : 847 - U1928
[48] Inverse class-F X-band SiGe HBT power amplifier with 44% PAE and 24.5 dBm peak output power
Song, Ickhyun
Ulusoy, Ahmet Cagri
Oakley, Michael A.
Ju, Inchan
Cho, Moon-Kyu
Cressler, John D.
[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2016, 58 (12) : 2868 - 2871
[49] Microwave class-F and inverse class-F power amplifiers designs using GaN technology and GaAs pHEMT
Gao, S.
Butterworth, P.
Sambell, A.
Sanabria, C.
Xu, H.
Heikman, S.
Mishra, U.
York, R. A.
[J]. 2006 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4, 2006, : 1 - +
[50] Extended Inverse Class-F Continuum for Designing Broadband Power Amplifier
Gan, Decheng
Shi, Weimin
[J]. JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2021, 30 (01)

← 1 2 3 4 5 →