Monolithically integrated electro-optic modulator fabricated on lithium niobate on insulator by photolithography assisted chemo-mechanical etching

被引:12
|
作者
Liang, Youting [1 ,2 ]
Zhou, Junxia [1 ,2 ]
Yin, Difeng [3 ,4 ]
Zheng, Yong [1 ,2 ]
Qi, Hongxin [1 ,2 ]
Wang, Min [1 ,2 ]
Fang, Zhiwei [1 ,2 ]
Wu, Rongbo [3 ,4 ]
Cheng, Ya [1 ,2 ,3 ,4 ,5 ,6 ]
机构
[1] East China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China
[2] East China Normal Univ, Sch Phys & Elect Sci, XXL Extreme Optoelectromech Lab, Shanghai 200241, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China
[4] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[5] Shandong Normal Univ, Collaborat Innovat Ctr Light Manipulat & Applicat, Jinan 250358, Peoples R China
[6] Shanghai Res Ctr Quantum Sci, Shanghai 201315, Peoples R China
来源
JOURNAL OF PHYSICS-PHOTONICS | 2021年 / 3卷 / 03期
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
lithium niobate; electro-optic modulator; insert loss; half wave voltage; photolithography assisted chemo-mechanical etching;
D O I
10.1088/2515-7647/ac0cc0
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Integrated electro-optic (EO) modulators are one of the building blocks of photonic integrated circuits. Here, we design and fabricate an EO Mach-Zehnder waveguide modulator on lithium niobate on insulator using photolithography assisted chemo-mechanical etching technology. We optimize the performance of multi-mode interferometer which serves as the 3 dB splitter as well as that of the inverse taper to achieve efficient fiber-waveguide coupling, resulting in a fiber-to-fiber insert loss of 7.6 dB for the fabricated device, with a half wave voltage (HWV) (V-pi ) of 0.84 V and a HWV-length product (V-pi x L) of 3.4 V cm. The all-optical-lithography fabrication approach holds the promising potential for mass production of EO modulators of cost-effectiveness and low V-pi .
引用
收藏
页数:6
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