Development of Pixel Detector in Novel Sub-micron Technology SOI CMOS 200 nm

被引：0
|
作者：
Bugiel, Szymon [1 ]
Dasgupta, Roma [1 ]
Glab, Sebastian [1 ]
Idzik, Marek [1 ]
Kapusta, Piotr [2 ]
机构：
[1] AGH Univ Sci & Technol, PL-30059 Krakow, Poland
[2] Inst Nucl Phys PAN, PL-31342 Krakow, Poland
来源：
2014 PROCEEDINGS OF THE 21ST INTERNATIONAL CONFERENCE ON MIXED DESIGN OF INTEGRATED CIRCUITS & SYSTEMS (MIXDES) | 2014年
关键词：
Silicon-On-Insulator (SOI); SOI sensor; Double SOI; pixel detector; front-end electronic; correlated double sampling (CDS);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in 200 nm SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionising particle (MIP) tracking in particle physics experiments. For this reason the overriding goal of the project was to increase the signal to noise ratio of the readout circuit and sensor.
引用
收藏
页码：205 / 208
页数：4
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