GISAXS analysis of the precipitates in GeMn thin layers.

被引：0
|
作者：
Vales, Vaclav [1 ]
Holy, Vaclav [1 ]
Lechner, Rainer T. [2 ]
机构：
[1] Charles Univ Prague, Dept Condensed Matter Phys, Prague, Czech Republic
[2] Kepler Univ Linz, Inst Semicond Phys, Linz, Austria
来源：
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 2010年 / 66卷
关键词：
GeMn; GISAXS; precipitates;
D O I：
10.1107/S0108767310093116
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
FA5-MS39-P
引用
收藏
页码：S300 / S300
页数：1
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