Optimization of Small-Signal Model of GaN HEMT by Using Evolutionary Algorithms

被引：40
|
作者：
Majumder, Arijit [1 ]
Chatterjee, Soumyo [2 ]
Chatterjee, Sayan [3 ]
Chaudhari, Sheli Sinha [3 ]
Poddar, Dipak Ranjan [3 ]
机构：
[1] Govt India, Soc Appl Microwave Elect Engn & Res, Dept Elect & IT, MCIT, Kolkata 700091, India
[2] Heritage Inst Technol, Dept ECE, Kolkata 700107, India
[3] Jadavpur Univ, Dept ETCE, Kolkata 700032, India
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2017年 / 27卷 / 04期
关键词：
Evolutionary algorithms; GaN HEMT; optimization; PARAMETER-EXTRACTION; DIFFERENTIAL EVOLUTION;
D O I：
10.1109/LMWC.2017.2678437
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a new evolutionary algorithm-based method for the optimization of intrinsic elements of small-signal model (SSM) of GaN HEMT devices is presented. The method uses a unique search space exploration strategy for evolutionary algorithms to obtain an optimized compact SSM from the extracted parameter and measured S-parameters. The validity of the method is verified by comparing the measured S-parameter data of a 2x0.1x50 mu m(2) GaN/Si HEMT and a 4x0.1x75 mu m(2) GaN/SiC HEMT in the frequency range of 1 to 30 GHz. The modeled data and measured data are in good agreement.
引用
收藏
页码：362 / 364
页数：3
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