Optimization of Small-Signal Model of GaN HEMT by Using Evolutionary Algorithms

被引：40

作者：

Majumder, Arijit ^{[1
]}

Chatterjee, Soumyo ^{[2
]}

Chatterjee, Sayan ^{[3
]}

Chaudhari, Sheli Sinha ^{[3
]}

Poddar, Dipak Ranjan ^{[3
]}

机构：

[1] Govt India, Soc Appl Microwave Elect Engn & Res, Dept Elect & IT, MCIT, Kolkata 700091, India

[2] Heritage Inst Technol, Dept ECE, Kolkata 700107, India

[3] Jadavpur Univ, Dept ETCE, Kolkata 700032, India

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2017年 / 27卷 / 04期

关键词：

Evolutionary algorithms; GaN HEMT; optimization; PARAMETER-EXTRACTION; DIFFERENTIAL EVOLUTION;

D O I：

10.1109/LMWC.2017.2678437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a new evolutionary algorithm-based method for the optimization of intrinsic elements of small-signal model (SSM) of GaN HEMT devices is presented. The method uses a unique search space exploration strategy for evolutionary algorithms to obtain an optimized compact SSM from the extracted parameter and measured S-parameters. The validity of the method is verified by comparing the measured S-parameter data of a 2x0.1x50 mu m(2) GaN/Si HEMT and a 4x0.1x75 mu m(2) GaN/SiC HEMT in the frequency range of 1 to 30 GHz. The modeled data and measured data are in good agreement.

引用

页码：362 / 364

页数：3

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