Formation and study of buried SiC layers with a high content of radiation defects

Protons with energy E = 100 keV were implanted with doses ranging from 2 x 10(17) to 4 x 10(17) cm(-2) into 6H- and 4H-SiC n-type samples at room temperature. The samples were subjected to various types of postimplantation heat treatment in the temperature range 550-1500degreesC. The parameters of the samples were studied by measuring the capacitance-voltage and current-voltage characteristics and by analyzing the photoluminescence spectra. Blistering on the surface of the sample is observed after annealing the samples at a temperature of 800degreesC only after implantation of protons with a dose of less than or equal to3 x 10(17) cm(-2). A decrease in the resistivity of the compensated layer sets in after annealing at a temperature of similar to1200degreesC and is completed after annealing at a temperature of similar to1500degreesC. A drastic decrease in the photoluminescence intensity is observed after implantation for all types of samples. Recovery of the photoluminescence intensity sets in after annealing at temperatures greater than or equal to800degreesC and is complete after annealing at a temperature of 1500degreesC. (C) 2004 MAIK "Nauka/Interperiodica".