First principles study of composition fluctuation and residual strain in InGaN/GaN MQW

被引：0
|
作者：
Mukose, Kiichiro [1 ]
Uehara, Noriyuki [1 ]
Sakamoto, Akihiko [1 ]
Yoshioka, Yu [1 ]
Sano, Masatoshi [1 ]
机构：
[1] Tokyo Univ Sci, Fac Engn, Shinjuku Ku, Tokyo 1628601, Japan
来源：
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 2008年 / 64卷
关键词：
ab-initio calculations; multilayer structures; residual stress strain;
D O I：
10.1107/S0108767308092854
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
P03.05.16
引用
收藏
页码：C222 / C223
页数：2
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