Study of various strain energy distribution in InGaN/GaN multiple quantum wells

被引：1
|
作者：
Lin, YS [1 ]
机构：
[1] Chinese Naval Acad, Dept Elect Engn, Kaohsiung 813, Taiwan
来源：
JOURNAL OF MATERIALS SCIENCE | 2006年 / 41卷 / 10期
关键词：
D O I：
10.1007/s10853-005-5629-x
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The formation of In-rich quantum dot structures will induce strain energy in the quantum well layer, forming the clusters and stacking faults influencing the optical properties. Our results showed different QW widths with the formation of various In-rich quantum dot structures and different levels of strain energy. Upon thermal annealing, energy relaxation resulted in the reshaping of quantum dots and hence the changes of optical properties. The results of temperature variations of PL spectral peak, integrated PL intensity and PL decay time showed consistent trends in varying strain energy distribution. (c) 2006 Springer Science + Business Media, Inc.
引用
收藏
页码：2953 / 2958
页数：6
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