Improved quality of InGaN/GaN multiple quantum wells by a strain releif layer

被引：43

作者：

Niu, NH ^{[1
]}

Wang, HB ^{[1
]}

Liu, JP ^{[1
]}

Liu, NX ^{[1
]}

Xing, YH ^{[1
]}

Han, J ^{[1
]}

Deng, J ^{[1
]}

Shen, GD ^{[1
]}

机构：

[1] Beijing Univ Technol, Optoelect Technol Lab, Beijing 100022, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 286卷 / 02期

关键词：

atom force microscopy; double crystal X-ray diffractometry; photoluminescence; MOCVD; multiple quantum wells; nitrides;

D O I：

10.1016/j.jcrysgro.2005.09.027

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Different InGaN/GaN multi quantum wells (MQWs) structures were grown by metalorganic chemical vapor deposition (MOCVD). Samples were investigated by photoluminescence (PL), atom force microscopy (AFM) and double crystal X-ray diffractometry (DCXRD) to character their optical, morphological and crystal properties. By inserting the strain relief layer, the PL intensity was increased more than two times. The surface morphology was improved and the density of V-pits was reduced from 16-18 x 10(8) to 6-7 x 10(8)/cm(2). Further, the interface abruptness was also improved. We attributed the improvements of the quality of InGaN/GaN MQWs to the relief of strain in the InGaN/GaN MQWs. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：209 / 212

页数：4

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