Luminescence properties of GaAs nanocrystals fabricated by sequential ion implantation

被引：6
|
作者：
Kanemitsu, Y [1 ]
Tanaka, H
Kushida, T
Min, KS
Atwater, HA
机构：
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan
[2] CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA
来源：
JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷
关键词：
GaAs nanocrystal; ion implantation; hydrogen passivation;
D O I：
10.1016/S0022-2313(99)00452-4
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have studied photoluminescence (PL) properties of GaAs nanocrystals in SiO2 matrices formed by sequential ion implantation and thermal annealing. After thermal annealing at 900-1000 degrees C, broad PL due to GaAs nanocrystals appears in the red spectral region. The spectral shape of the red PL band depends on the hydrogen concentration in the sample. The hydrogen effect on GaAs nanocrystal luminescence will be discussed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：432 / 434
页数：3
相关论文
共 50 条
  • [31] Optical properties of silicon nanocrystals formed by ion implantation
    Wu, MH
    Ueda, A
    Mu, R
    Henderson, DO
    Zuhr, A
    Meldrum, A
    White, CW
    PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON QUANTUM CONFINEMENT: NANOSTRUCTURES, 1999, 98 (19): : 106 - 117
  • [32] Altering the luminescence properties of self-assembled quantum dots in GaAs by focused ion beam implantation
    Charlotte Rothfuchs
    Nadezhda Kukharchyk
    Markus K. Greff
    Andreas D. Wieck
    Arne Ludwig
    Applied Physics B, 2016, 122
  • [33] Optical properties of silicon nanoclusters fabricated by ion implantation
    Shimizu-Iwayama, T
    Kurumado, N
    Hole, DE
    Townsend, PD
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 6018 - 6022
  • [34] Broadband luminescence of Cu nanoparticles fabricated in SiO2 by ion implantation
    Truong Khang Nguyen
    Le, Khai Q.
    Canimoglu, Adil
    Can, Nurdogan
    APPLIED RADIATION AND ISOTOPES, 2016, 115 : 109 - 112
  • [35] Fabrication of Cu-coated Ag nanocrystals in silica by sequential ion implantation
    Anderson, TS
    Magruder, RH
    Wittig, JE
    Kinser, DL
    Zuhr, RA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 171 (03): : 401 - 405
  • [36] GAAS VARACTOR DIODES FOR UHF TV TUNERS FABRICATED BY ION-IMPLANTATION
    NIIKURA, I
    TOYODA, N
    SHIMURA, Y
    YOKOYAMA, S
    MIHARA, M
    HAYASHI, T
    HARA, T
    ELECTRONICS LETTERS, 1978, 14 (01) : 9 - 10
  • [37] LATERAL GAAS PHOTODETECTOR FABRICATED BY GA FOCUSED-ION-BEAM IMPLANTATION
    IGUCHI, H
    HIRAYAMA, Y
    OKAMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (07): : L560 - L563
  • [38] GAAS HALL-EFFECT DEVICES FABRICATED BY ION-IMPLANTATION TECHNIQUE
    INADA, T
    OHKUBO, T
    KATO, S
    KITAHARA, M
    KANDA, Y
    HARA, T
    ELECTRONICS LETTERS, 1978, 14 (16) : 503 - 505
  • [39] GAAS QUANTUM WIRE TRANSISTORS FABRICATED BY FOCUSED ION-BEAM IMPLANTATION
    ODAGIRI, T
    HIRAMOTO, T
    HIRAKAWA, K
    IKOMA, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C375 - C375
  • [40] Structural and optical properties of ge nanocrystals in SiO2 glasses fabricated by multi-energy ion implantation
    Masuda, K
    Yamamoto, M
    Kanaya, M
    Kanemitsu, Y
    MICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERS, 2000, : 172 - 173
12345